BDV67B Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V

د.إ42.00

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SKU: BDV67B Category: Tag:

د.إ42.00

Description


BDV67B Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V.  Multicomp are through hole, NPN complementary power transistor in TO-247 metal can package. This device is used for switching and amplification.

  • Collector emitter voltage (Vce) of 100V
  • Continuous collector current (Ic) of 25A
  • Power dissipation of 125mW




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BDV67B Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V

BDV67B Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V

د.إ42.00

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