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BDV67B Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V
BDV67B Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V. Multicomp are through hole, NPN complementary power transistor in TO-247 metal can package. This device is used for switching and amplification.
- Collector emitter voltage (Vce) of 100V
- Continuous collector current (Ic) of 25A
- Power dissipation of 125mW