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BD241C Bipolar (BJT) Single Transistor, NPN, 100 V, 40 W, 5 A
BD241C Bipolar (BJT) Single Transistor, NPN, 100 V, 40 W, 5 A. The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.